A Review of Recent Progress in β‐Ga₂O₃ Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition

Gallium oxide (Ga 2 O 3 ) is a highly promising ultrawide‐bandgap semiconductor for power electronics that emerged about decade ago. Epitaxial growth Ga at the small scale demonstrated. In order to develop scalable manufacturing of high‐performance epitaxial structures, in‐depth understanding fundamental processes, control parameters, and mechanism imperative. This review discusses recent progress in β‐Ga films highlights challenges obtaining high rate, low defects, carrier mobilities. Compared with other epitaxy methods, metal–organic chemical vapor deposition (MOCVD) offers wider window precursor selection option, minimize tradeoff between crystal quality rate. Growth rate inversely proportional temperature, within certain temperature window, because unavoidable premature gas‐phase reactions desorption volatile gallium suboxide O) elevated temperatures. background impurity incorporation, mobilities can be affected by choice MOCVD precursors, nucleation, adsorption/desorption/diffusion adatoms on substrate surfaces different orientations, including effect growing cleavage noncleavage planes. summarizes current status analyzes major factors enhance mobility reduce doping concentration. The insights gained help advance manufacturability device‐grade thin films.